Invention Grant
- Patent Title: High frequency absorptive switch architecture
- Patent Title (中): 高频吸收开关架构
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Application No.: US14527168Application Date: 2014-10-29
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Publication No.: US09564887B2Publication Date: 2017-02-07
- Inventor: Peter Bacon
- Applicant: Peregrine Semiconductor Corporation
- Applicant Address: US CA San Diego
- Assignee: Peregrine Semiconductor Corporation
- Current Assignee: Peregrine Semiconductor Corporation
- Current Assignee Address: US CA San Diego
- Agency: Jaquez Land Greenhaus LLP
- Agent Martin J. Jaquez, Esq.; John Land, Esq.
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H03K17/16 ; H03K17/693

Abstract:
An absorptive switch architecture suitable for use in high frequency RF applications. A switching circuit includes a common terminal and one or more ports, any of which may be selectively coupled to the common terminal by closing an associated path switch; non-selected, unused ports are isolated from the common terminal by opening an associated path switch. Between each path switch and a port are associated shunt switches for selectively coupling an associated signal path to circuit ground. Between each path switch and a port is an associated absorptive switch module. Each absorptive switch module includes a resistor coupled in parallel with a switch. The combination of the resistor and the switch of the absorptive switch module is placed in series with a corresponding signal path from each port to the common terminal, rather than in a shunt configuration.
Public/Granted literature
- US20160126943A1 High Frequency Absorptive Switch Architecture Public/Granted day:2016-05-05
Information query
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