Invention Grant
US09564583B2 Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
有权
存储器件包括非相变非晶态硫族化物存储层和金属硫族化物离子源层
- Patent Title: Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
- Patent Title (中): 存储器件包括非相变非晶态硫族化物存储层和金属硫族化物离子源层
-
Application No.: US10514009Application Date: 2004-03-18
-
Publication No.: US09564583B2Publication Date: 2017-02-07
- Inventor: Katsuhisa Aratani , Akira Kouchiyama , Minoru Ishida
- Applicant: Katsuhisa Aratani , Akira Kouchiyama , Minoru Ishida
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Dentons US LLP
- Priority: JPP2003-078447 20030320; JPP2003-137651 20030515
- International Application: PCT/JP2004/003686 WO 20040318
- International Announcement: WO2004/084306 WO 20040930
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A memory element includes an amorphous thin-film that is between a first electrode and a second electrode in which at least one of the first electrode and the second electrode contains Ag or Cu. The amorphous thin film is a non-phase changing, amorphous material. A storage device includes a plurality of memory elements. Each memory element includes a wiring connected to a side of the first electrode and a wiring connected to a side of the second electrode.
Public/Granted literature
- US20050226062A1 Memory element and storage device using this Public/Granted day:2005-10-13
Information query
IPC分类:
