Invention Grant
- Patent Title: Display device and semiconductor device
- Patent Title (中): 显示装置和半导体装置
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Application No.: US14989886Application Date: 2016-01-07
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Publication No.: US09564539B2Publication Date: 2017-02-07
- Inventor: Mizuki Sato
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2006-199292 20060721
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L29/786 ; H01L27/12 ; H01L27/15 ; G02F1/1362 ; H01L27/108 ; H01L27/32
Abstract:
An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.
Public/Granted literature
- US20160118505A1 Display Device And Semiconductor Device Public/Granted day:2016-04-28
Information query
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