Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
- Patent Title (中): 半导体器件及半导体器件的制造方法
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Application No.: US13869271Application Date: 2013-04-24
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Publication No.: US09564527B2Publication Date: 2017-02-07
- Inventor: Toshihiro Ohki , Masato Nishimori , Tadahiro Imada
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/24 ; H01L29/40 ; H01L29/417 ; H01L29/423 ; H01L29/06 ; H01L29/08 ; H01L29/20 ; H01L29/267
Abstract:
A semiconductor device includes a first semiconductor layer of a first conductivity type formed on one side of a semiconductor substrate; a second semiconductor layer of a second conductivity type formed on the first semiconductor layer; a third semiconductor layer of the first conductivity type formed on the second semiconductor layer; an opening part formed by removing part of the first to third semiconductor layers; a gate insulating film formed so as to cover an inner wall of the opening part; a gate electrode formed inside the opening part via the gate insulating film; a source electrode formed on a surface of the third semiconductor layer; a drain electrode connected to a part corresponding to the gate electrode on another side of the semiconductor substrate; and a fourth electrode formed on the another side of the semiconductor substrate at a part corresponding to the source electrode.
Public/Granted literature
- US20130228795A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2013-09-05
Information query
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