Invention Grant
US09564521B2 Semiconductor device comprising ferroelectric elements and fast high-K metal gate transistors
有权
包括铁电元件和快速高K金属栅极晶体管的半导体器件
- Patent Title: Semiconductor device comprising ferroelectric elements and fast high-K metal gate transistors
- Patent Title (中): 包括铁电元件和快速高K金属栅极晶体管的半导体器件
-
Application No.: US15076850Application Date: 2016-03-22
-
Publication No.: US09564521B2Publication Date: 2017-02-07
- Inventor: Till Schloesser , Peter Baars
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Priority: DE102012205977 20120412
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/44 ; H01L29/66 ; H01L21/28 ; H01L29/51 ; H01L27/115 ; H01L29/78 ; H01L21/8234
Abstract:
A semiconductor device comprises a first and second circuit element. The first circuit element comprises a first electrode structure including a first high-k dielectric layer, the first high-k dielectric layer having a first thickness and comprising hafnium. The second circuit element comprises a second electrode structure that includes a second high-k dielectric layer having a ferroelectric behavior, wherein the second high-k dielectric layer has a second thickness and comprises hafnium, and wherein the second thickness is greater than the first thickness.
Public/Granted literature
- US20160204219A1 SEMICONDUCTOR DEVICE COMPRISING FERROELECTRIC ELEMENTS AND FAST HIGH-K METAL GATE TRANSISTORS Public/Granted day:2016-07-14
Information query
IPC分类:
