Invention Grant
- Patent Title: Fin field-effect transistor and fabrication method thereof
- Patent Title (中): 鳍场效应晶体管及其制造方法
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Application No.: US15059434Application Date: 2016-03-03
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Publication No.: US09564512B2Publication Date: 2017-02-07
- Inventor: Haiyang Zhang , Chenglong Zhang
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Shanghai
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201510149625 20150331
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/66 ; H01L21/265 ; H01L21/3213 ; H01L21/3105 ; H01L29/51 ; H01L29/49 ; H01L21/31 ; H01L21/283
Abstract:
A method for fabricating a FinFET structure comprises providing a semiconductor substrate; forming a hard mask layer on the semiconductor substrate; forming a dummy gate structure having a dummy gate, a first sidewall spacer and a second sidewall spacer; removing the dummy gate to form a first trench; forming first sub-fins in the semiconductor substrate under the hard mask layer in the first trench; forming a first metal gate structure in the first trench; removing the first sidewall spacer to form a second trench; forming second sub-fins in the semiconductor substrate under the hard mask layer in the second trench; forming a second metal gate structure in the second trench; removing the second sidewall spacer to form a third trench; forming third sub-fins in the semiconductor substrate under the hard mask layer in the third trench; and forming a third metal gate structure in the third trench.
Public/Granted literature
- US20160293727A1 FIN FIELD-EFFECT TRANSISTOR AND FABRICATION METHOD THEREOF Public/Granted day:2016-10-06
Information query
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