Invention Grant
US09564505B2 Changing effective work function using ion implantation during dual work function metal gate integration
有权
在双功能金属门集成中，使用离子注入来改变有效的功函数
- Patent Title: Changing effective work function using ion implantation during dual work function metal gate integration
- Patent Title (中): 在双功能金属门集成中，使用离子注入来改变有效的功函数
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Application No.: US14254939Application Date: 2014-04-17
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Publication No.: US09564505B2Publication Date: 2017-02-07
- Inventor: Michael P. Chudzik , Martin M. Frank , Herbert L. Ho , Mark J. Hurley , Rashmi Jha , Naim Moumen , Vijay Narayanan , Dae-Gyu Park , Vamsi K. Paruchuri
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Anthony Canale
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L29/49 ; H01L21/28 ; H01L21/8238 ; H01L27/092 ; H01L29/51
Abstract:
Ion implantation to change an effective work function for dual work function metal gate integration is presented. One method may include forming a high dielectric constant (high-k) layer over a first-type field effect transistor (FET) region and a second-type FET region; forming a metal layer having a first effective work function compatible for a first-type FET over the first-type FET region and the second-type FET region; and changing the first effective work function to a second, different effective work function over the second-type FET region by implanting a species into the metal layer over the second-type FET region.
Public/Granted literature
- US20140225199A1 CHANGING EFFECTIVE WORK FUNCTION USING ION IMPLANTATION DURING DUAL WORK FUNCTION METAL GATE INTEGRATION Public/Granted day:2014-08-14
Information query
IPC分类:
