Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14963825Application Date: 2015-12-09
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Publication No.: US09564491B2Publication Date: 2017-02-07
- Inventor: Mariko Suzuki , Tadashi Sakai
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2014-253215 20141215
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/036 ; H01L29/16 ; H01L29/868 ; H01L29/20 ; H01L29/167 ; H01L29/267 ; H01L29/66 ; H01L29/737 ; H01L29/861 ; H01L29/45
Abstract:
According to one embodiment, a semiconductor device includes an n-type semiconductor layer, a first electrode, and a nitride semiconductor layer. The n-type semiconductor layer includes diamond. The nitride semiconductor layer is provided between the n-type semiconductor layer and the first electrode. The nitride semiconductor layer includes AlxGa1−xN (0≦x≦1) and is of n-type.
Public/Granted literature
- US20160172449A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-06-16
Information query
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