Invention Grant
US09564489B2 Multiple gate field-effect transistors having oxygen-scavenged gate stack
有权
具有氧清除栅叠层的多栅极场效应晶体管
- Patent Title: Multiple gate field-effect transistors having oxygen-scavenged gate stack
- Patent Title (中): 具有氧清除栅叠层的多栅极场效应晶体管
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Application No.: US14753916Application Date: 2015-06-29
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Publication No.: US09564489B2Publication Date: 2017-02-07
- Inventor: Yee-Chia Yeo , Chih Chieh Yeh , Chih-Hsin Ko , Cheng-Hsien Wu , Liang-Yin Chen , Xiong-Fei Yu , Yen-Ming Chen , Chan-Lon Yang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/10 ; H01L29/66 ; H01L29/165 ; H01L21/324
Abstract:
A method includes forming a silicon cap layer on a semiconductor fin, forming an interfacial layer over the silicon cap layer, forming a high-k gate dielectric over the interfacial layer, and forming a scavenging metal layer over the high-k gate dielectric. An anneal is then performed on the silicon cap layer, the interfacial layer, the high-k gate dielectric, and the scavenging metal layer. A filling metal is deposited over the high-k gate dielectric.
Public/Granted literature
- US20160380056A1 MULTIPLE GATE FIELD-EFFECT TRANSISTORS HAVING OXYGEN-SCAVENGED GATE STACK Public/Granted day:2016-12-29
Information query
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