Invention Grant
- Patent Title: TFT substrates and the manufacturing method thereof
- Patent Title (中): TFT基板及其制造方法
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Application No.: US14433630Application Date: 2014-12-09
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Publication No.: US09564458B2Publication Date: 2017-02-07
- Inventor: Shui-chih Lien , Yuan Xiong
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Shenzhen, Guangdong
- Agent Andrew C. Cheng
- Priority: CN201410698801 20141126
- International Application: PCT/CN2014/093349 WO 20141209
- International Announcement: WO2016/082250 WO 20160602
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/66 ; H01L29/786 ; G02F1/1362

Abstract:
A TFT substrate and the manufacturing method thereof are disclosed. The method includes: providing a substrate; forming a gate electrode on the substrate; forming a first insulation layer and an active layer on the gate electrode in turn; forming a first black matrix on the active layer; forming a source electrode and a drain electrode on the first black matrix; forming a second insulation layer on the source electrode and the drain electrode; and forming a pixel electrode on the second insulation layer. The pixel electrode is electrically connected to the source electrode or the drain electrode via the second insulation layer. In this way, the masking effect of the display panel assembled by the TFT substrate can be ensured. In addition, the coupling capacitance between the data line and the scanning line may be reduced.
Public/Granted literature
- US20160148956A1 TFT SUBSTRATES AND THE MANUFACTURING METHOD THEREOF Public/Granted day:2016-05-26
Information query
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