Invention Grant
US09564441B2 Two-transistor SRAM semiconductor structure and methods of fabrication
有权
双晶体管SRAM半导体结构及其制造方法
- Patent Title: Two-transistor SRAM semiconductor structure and methods of fabrication
- Patent Title (中): 双晶体管SRAM半导体结构及其制造方法
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Application No.: US14607025Application Date: 2015-01-27
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Publication No.: US09564441B2Publication Date: 2017-02-07
- Inventor: Harry Luan , Bruce L. Bateman , Valery Axelrad , Charlie Cheng , Christophe J. Chevallier
- Applicant: Kilopass Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Kilopass Technology, Inc.
- Current Assignee: Kilopass Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Aka Chan LLP
- Main IPC: H01L27/102
- IPC: H01L27/102 ; H01L29/06 ; H01L29/10 ; H01L27/11 ; H01L21/768 ; H01L21/8229 ; H01L23/528 ; H01L29/08 ; G11C11/41 ; G11C11/39 ; G11C11/411 ; H01L21/8249 ; H01L27/06 ; G11C11/412 ; G11C11/419 ; H01L27/082
Abstract:
A two-transistor memory cell based upon a thyristor for an SRAM integrated circuit is described together with a process for fabricating it. The memory cell can be implemented in different combinations of MOS and bipolar select transistors, or without select transistors, with thyristors in a semiconductor substrate with shallow trench isolation. Standard CMOS process technology can be used to manufacture the SRAM.
Public/Granted literature
- US20160093623A1 Two-Transistor SRAM Semiconductor Structure and Methods of Fabrication Public/Granted day:2016-03-31
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