Invention Grant
- Patent Title: Semiconductor package structure and method for manufacturing the same
- Patent Title (中): 半导体封装结构及其制造方法
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Application No.: US14669015Application Date: 2015-03-26
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Publication No.: US09564419B2Publication Date: 2017-02-07
- Inventor: Shih-Hung Chen
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L25/065 ; H01L25/00 ; H01L23/00

Abstract:
A semiconductor package structure and a method for manufacturing the same are provided. The semiconductor package structure comprises a substrate, a first chip, a first dielectric layer, a dielectric encapsulation layer and at least one first via. The first chip is disposed on the substrate. The first chip has a first landing area. The first dielectric layer is disposed on the first chip. The dielectric encapsulation layer encapsulates the first chip and the first dielectric layer. The at least one first via penetrates through the dielectric encapsulation layer and the first dielectric layer. The at least one first via connects to the first landing area of the first chip.
Public/Granted literature
- US20160284668A1 SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2016-09-29
Information query
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