Invention Grant
- Patent Title: Semiconductor devices having metal bumps with flange
- Patent Title (中): 半导体器件具有带凸缘的金属凸块
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Application No.: US14793813Application Date: 2015-07-08
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Publication No.: US09564410B2Publication Date: 2017-02-07
- Inventor: Floro Lopez Camenforte, III , James Raymond Maliclic Baello , Armando Tresvalles Clarina, Jr.
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L21/50
- IPC: H01L21/50 ; H01L21/48 ; H01L23/498 ; H01L23/00 ; H01L21/768 ; H01L21/78
Abstract:
A semiconductor device having a terminal site (100) including a flat pad (110) of a first metal covered by a layer (130) of dielectric material, the layer over the pad parallel to the pad and having a window of a first diameter (132) exposing the surface of the underlying pad. The terminal site further has a patch-shaped film (140) of a second metal covering the surface of the exposed first metal and the surface of an annulus of the dielectric layer framing the window, the film patch having a second diameter (141) greater than the first diameter; and a bump (150) of a third metal adhering to the film, the bump having a third diameter (151) smaller than the second diameter, whereby the film protrudes like a flange from the bump.
Public/Granted literature
- US20170012012A1 SEMICONDUCTOR DEVICES HAVING METAL BUMPS WITH FLANGE Public/Granted day:2017-01-12
Information query
IPC分类:
