Radio-frequency (RF) devices are fabricated by providing a field-effect transistor (FET) formed over an oxide layer, forming one or more electrical connections to the FET, forming one or more dielectric layers over at least a portion of the electrical connections, electrically coupling an electrical element to the FET via the one or more electrical connections, disposing a handle wafer layer on at least a portion of the one or more dielectric layers, the handle wafer layer being at least partially over the electrical element; and removing at least a portion of the handle wafer layer to form an opening exposing at least a portion of the electrical element.