Systems and methods for forming semiconductor wafers with wafer support structures includes: multiple semiconductor devices formed in multiple semiconductor dies. An electrical interconnect structure is formed over the semiconductor devices and providing electrical connections to the semiconductor devices. The electrical interconnect structure includes multiple metallization layers. At least one portion of at least one metallization layer includes variations in density of conductive lines or conducting devices as compared to the other portions of the metallization layers. At least one wafer support structure is formed substantially across a width of the semiconductor wafer. The semiconductor wafer being thinned to between about 40 um and about 200 um after the semiconductor devices formed thereon. The at least one wafer support structure having a thickness and a width to offset physical stresses caused by the variations in density of conductive lines or conducting devices in the respective portions of the metallization layers.