Invention Grant
- Patent Title: Magnetic shielding of perpendicular STT-MRAM
- Patent Title (中): 垂直STT-MRAM的磁屏蔽
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Application No.: US14038959Application Date: 2013-09-27
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Publication No.: US09564403B2Publication Date: 2017-02-07
- Inventor: Robert Allinger , Karl Hofmann , Klaus Knobloch , Robert Strenz
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Schiff Hardin LLP
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L23/552 ; H01L43/12 ; H01L43/02 ; H01L43/08
Abstract:
A memory having an array of perpendicular spin-transfer torque (STT) magnetic random access memory (MRAM) cells, wherein each cell has a magnetic layer stack. A magnetic shield disposed between the cells and having a minimum height of at least the height of the magnetic layer stacks.
Public/Granted literature
- US20150091109A1 MAGNETIC SHIELDING OF PERPENDICULAR STT-MRAM Public/Granted day:2015-04-02
Information query
IPC分类:
