Invention Grant
US09564401B2 Method for thinning, metalizing, and dicing a semiconductor wafer, and semiconductor device made using the method
有权
半导体晶片的稀化，金属化和切割的方法以及使用该方法制造的半导体器件
- Patent Title: Method for thinning, metalizing, and dicing a semiconductor wafer, and semiconductor device made using the method
- Patent Title (中): 半导体晶片的稀化，金属化和切割的方法以及使用该方法制造的半导体器件
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Application No.: US14580341Application Date: 2014-12-23
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Publication No.: US09564401B2Publication Date: 2017-02-07
- Inventor: Hiroyuki Numaguchi
- Applicant: LAPIS Semiconductor Co., Ltd.
- Applicant Address: JP Yokohama
- Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee Address: JP Yokohama
- Agency: Rabin & Berdo, P.C.
- Priority: JP2012-198529 20120910
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L23/02 ; H01L23/34 ; H01L21/02 ; H01L21/027 ; H01L21/304 ; H01L21/3213 ; H01L21/78 ; H01L21/683
Abstract:
There is provided a method of fabricating a semiconductor device, method including: a) forming semiconductor elements in plural element regions surrounded by assumed dicing lines on a first principal surface of a semiconductor wafer; b) grinding the second principal surface in such a way that an outer peripheral portion of a second principal surface on the opposite side of the first principal surface of the semiconductor wafer becomes thicker than an inner peripheral portion of the second principal surface; c) forming a metal film, in such a way as to avoid sections corresponding to the dicing lines, on the second principal surface that has been ground in the grinding step; and d) cutting the semiconductor wafer from the second principal surface side along portions where the metal film is not formed on the dicing lines.
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