Invention Grant
- Patent Title: Conductive structure and method of forming the same
- Patent Title (中): 导电结构及其形成方法
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Application No.: US14333961Application Date: 2014-07-17
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Publication No.: US09564359B2Publication Date: 2017-02-07
- Inventor: Pin-Wen Chen , Chih-Wei Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/4763 ; H01L23/522 ; H01L21/768 ; H01L21/70

Abstract:
Conductive structures and method of manufacture thereof are disclosed. In some embodiments, a method of forming a conductive structure includes providing a substrate having a recess formed therein, the recess lined with a first seed layer and partially filled with a first conductive material; removing a portion of the first seed layer free from the first conductive material to form an exposed surface of the recess; lining the exposed surface of the recess with a second seed layer; and filling the recess with a second conductive material, the second conductive material covering the first conductive material and the second seed layer.
Public/Granted literature
- US20160020142A1 CONDUCTIVE STRUCTURE AND METHOD OF FORMING THE SAME Public/Granted day:2016-01-21
Information query
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