Invention Grant
- Patent Title: Method and apparatus for fabricating dielectric structures
- Patent Title (中): 用于制造电介质结构的方法和装置
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Application No.: US14553436Application Date: 2014-11-25
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Publication No.: US09564329B2Publication Date: 2017-02-07
- Inventor: Kay Song , Minghang Li , Brian Lu
- Applicant: Aixtron, Inc.
- Applicant Address: DE Herzogenrath
- Assignee: AIXTRON, SE
- Current Assignee: AIXTRON, SE
- Current Assignee Address: DE Herzogenrath
- Agency: Ascenda Law Group, PC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/28 ; C23C16/40 ; C23C16/455 ; H01L29/51
Abstract:
A composite dielectric structure having one or more Leakage Blocking Layers (LBL) interleaved with one or more Laminate Dielectric Layers (LDL), Alloy Dielectric Layers (ADL), or Co-deposit Dielectric Layers (CDL). Each LDL, ADL, and CDL includes dopants incorporated in a respective base dielectric layer (BDL); where LDLs are formed by incorporating a doping layer into a BDL using a laminate method, ADLs are formed by incorporating a dopant into a BDL using an alloying method; and CDLs are formed by pulsing a BDL base material and a dopant together using a co-deposit method.
Public/Granted literature
- US20150155157A1 Method and Apparatus for Fabricating Dielectric Structures Public/Granted day:2015-06-04
Information query
IPC分类:
