Invention Grant
- Patent Title: Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device
- Patent Title (中): 激光照射方法,激光照射装置以及半导体装置的制造方法
-
Application No.: US14248425Application Date: 2014-04-09
-
Publication No.: US09564323B2Publication Date: 2017-02-07
- Inventor: Koichiro Tanaka , Tomoaki Moriwaka
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2001-256130 20010827
- Main IPC: G02B27/09
- IPC: G02B27/09 ; H01L21/268 ; B23K26/06 ; B23K26/064 ; H01L21/02 ; B23K26/073 ; H01L33/08 ; H01L21/28 ; H01L21/20 ; H01L27/32 ; H01L51/52 ; H01S3/00 ; H01S5/40 ; H01L27/12

Abstract:
If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface.
Public/Granted literature
Information query