Invention Grant
- Patent Title: Cyclic epitaxial deposition and etch processes
- Patent Title (中): 循环外延沉积和蚀刻工艺
-
Application No.: US13792261Application Date: 2013-03-11
-
Publication No.: US09564321B2Publication Date: 2017-02-07
- Inventor: Chun Hsiung Tsai , Meng-Yueh Liu , Chien-Chang Su , Yuan-Feng Chao , Yuh-Da Fan
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; H01L21/02 ; H01L21/3065
Abstract:
A cyclic deposition and etch method is provided. The method includes depositing an epitaxial layer over a substrate at a first temperature and etching a portion of the deposited epitaxial layer at a variable temperature higher than the first temperature. The step of etching is performed while varying the temperature.
Public/Granted literature
- US20140256119A1 CYCLIC EPITAXIAL DEPOSITION AND ETCH PROCESSES Public/Granted day:2014-09-11
Information query
IPC分类:
