Invention Grant
- Patent Title: Method for preparing a silicon dioxide substrate-based graphene transparent conductive film
- Patent Title (中): 制备二氧化硅基板的石墨烯透明导电膜的方法
-
Application No.: US14445589Application Date: 2014-07-29
-
Publication No.: US09564260B2Publication Date: 2017-02-07
- Inventor: Yue Shi
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: CN201410053173 20140217
- Main IPC: H01L21/31
- IPC: H01L21/31 ; C01B31/04 ; C23C16/01 ; H01B13/00 ; C23C16/26 ; C23C16/44 ; C23F1/00 ; H01B13/30 ; C23C16/56 ; C23C18/12 ; H01B1/04

Abstract:
The present invention provides a method for preparing a silicon dioxide substrate-based graphene transparent conductive film, which comprises: preparing a silicon dioxide substrate on a graphene transparent conductive film, thereby obtaining a silicon dioxide substrate-based graphene transparent conductive film. In the method for preparing a silicon dioxide substrate-based graphene transparent conductive film according to the embodiments of the present invention, the silicon dioxide substrate is prepared on the graphene transparent conductive film, and a graphene transferring step that is difficult to implement in the prior art can be avoided, thus the silicon dioxide substrate-based graphene transparent conductive film can be prepared conveniently, and the cost may be reduced at the same time.
Public/Granted literature
- US20150235743A1 Method for Preparing a Silicon Dioxide Substrate-Based Graphene Transparent Conductive Film Public/Granted day:2015-08-20
Information query
IPC分类: