Invention Grant
US09564243B2 Equivalent fuse circuit for a one-time programmable read-only memory array
有权
用于一次性可编程只读存储器阵列的等效熔丝电路
- Patent Title: Equivalent fuse circuit for a one-time programmable read-only memory array
- Patent Title (中): 用于一次性可编程只读存储器阵列的等效熔丝电路
-
Application No.: US14259687Application Date: 2014-04-23
-
Publication No.: US09564243B2Publication Date: 2017-02-07
- Inventor: Juergen Boldt , Stephan Hay
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee Address: SG Singapore
- Agency: Lorenz & Kopf, LLP
- Main IPC: G11C17/18
- IPC: G11C17/18 ; G11C17/16 ; G11C29/56 ; G01R31/07 ; G01R31/02 ; G01R31/327 ; G01R31/00 ; G11C29/50

Abstract:
Technologies are provided for measuring a programming current (PC) for a memory cell (MC) of a one-time programmable read-only memory array. The MC includes a fuse equivalent circuit (FEC) that includes a first current path (CP) having a first node, a second CP having a fuse of the memory cell and a second node, and a third CP. The PC is split into a first current, a second current and a third current that flow over the first CP, the second CP, and the third CP, respectively. A first voltage applied along the first path is divided to generate a second voltage at the first node, and an output voltage generated by an operational amplifier controls the second current to maintain a third voltage at the second node at substantially the same value as the second voltage so that the second current has a sufficiently low value and does not burn the fuse.
Public/Granted literature
- US20150310930A1 EQUIVALENT FUSE CIRCUIT FOR A ONE-TIME PROGRAMMABLE READ-ONLY MEMORY ARRAY Public/Granted day:2015-10-29
Information query