Invention Grant
US09564207B2 Semiconductor memory device, semiconductor memory system and method for controlling self refresh cycle thereof
有权
半导体存储器件，半导体存储器系统和用于控制其自刷新周期的方法
- Patent Title: Semiconductor memory device, semiconductor memory system and method for controlling self refresh cycle thereof
- Patent Title (中): 半导体存储器件，半导体存储器系统和用于控制其自刷新周期的方法
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Application No.: US14743442Application Date: 2015-06-18
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Publication No.: US09564207B2Publication Date: 2017-02-07
- Inventor: Kwi-Dong Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T GROUP LLP
- Priority: KR10-2015-0022380 20150213
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/4096 ; G11C11/406 ; G11C11/4099
Abstract:
A semiconductor memory device which performs a refresh operation. The semiconductor memory device may include an information detection unit suitable for detecting a refresh characteristic of a memory cell, a control signal generation unit suitable for generating a refresh control signal having a refresh cycle corresponding to the refresh characteristic, and a refresh driving unit suitable for driving a refresh operation on the memory cell with the refresh cycle in response to the refresh control signal.
Public/Granted literature
- US20160240240A1 SEMICONDUCTOR MEMORY DEVICE, SEMICONDUCTOR MEMORY SYSTEM AND OPERATION METHOD THEREOF Public/Granted day:2016-08-18
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