Invention Grant
- Patent Title: Increased refresh interval and energy efficiency in a DRAM
- Patent Title (中): 增加DRAM中的刷新间隔和能量效率
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Application No.: US14371180Application Date: 2013-09-01
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Publication No.: US09564202B2Publication Date: 2017-02-07
- Inventor: Yan Solihin
- Applicant: EMPIRE TECHNOLOGY DEVELOPMENT LLC
- Applicant Address: US DE Wilmington
- Assignee: EMPIRE TECHNOLOGY DEVELOPMENT LLC
- Current Assignee: EMPIRE TECHNOLOGY DEVELOPMENT LLC
- Current Assignee Address: US DE Wilmington
- Agency: Ren-Sheng International
- International Application: PCT/US2013/057757 WO 20130901
- International Announcement: WO2015/030834 WO 20150305
- Main IPC: G06F12/14
- IPC: G06F12/14 ; G11C11/4074 ; G11C29/02 ; G11C29/44 ; G11C29/50 ; G11C11/406 ; G11C7/10 ; G11C29/00 ; G11C11/40

Abstract:
Techniques described herein generally include methods and systems related to designing and operating a DRAM device that has significantly reduced refresh energy use. A method for designing a DRAM optimizes or otherwise improves the DRAM for energy efficiency based on a measured or predicted failure probability of memory cells in the DRAM. The DRAM may be configured to operate at an increased refresh interval, thereby reducing DRAM refresh energy but causing a predictable portion of the memory cells in the DRAM to leak electrical energy too quickly to retain data. The DRAM is further configured with a selected number of spare memory cells for replacing the “leaky” memory cells, so that operation of the DRAM at the increased refresh interval may result in little or no reduction in capacity of the DRAM.
Public/Granted literature
- US20150243340A1 INCREASED REFRESH INTERVAL AND ENERGY EFFICIENCY IN A DRAM Public/Granted day:2015-08-27
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