Invention Grant
US09564199B2 Methods of reading and writing data in a thyristor random access memory
有权
在晶闸管随机存取存储器中读取和写入数据的方法
- Patent Title: Methods of reading and writing data in a thyristor random access memory
- Patent Title (中): 在晶闸管随机存取存储器中读取和写入数据的方法
-
Application No.: US14841521Application Date: 2015-08-31
-
Publication No.: US09564199B2Publication Date: 2017-02-07
- Inventor: Harry Luan , Bruce L. Bateman , Valery Axelrad , Charlie Cheng
- Applicant: Kilopass Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Kilopass Technology, Inc.
- Current Assignee: Kilopass Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Aka Chan LLP
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C11/39 ; H01L29/74 ; H01L27/102
Abstract:
A volatile memory array using vertical thyristors is disclosed together with methods of operating the array to read data from and write data to the array.
Public/Granted literature
- US20160093356A1 Methods of Reading and Writing Data in a Thyristor Random Access Memory Public/Granted day:2016-03-31
Information query
