Invention Grant
- Patent Title: Flash storage device and control method for flash memory
- Patent Title (中): Flash存储设备和闪存控制方法
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Application No.: US13970779Application Date: 2013-08-20
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Publication No.: US09563550B2Publication Date: 2017-02-07
- Inventor: Chang-Kai Cheng
- Applicant: Silicon Motion, Inc.
- Applicant Address: TW Jhubei, Hsinchu County
- Assignee: SILICON MOTION, INC.
- Current Assignee: SILICON MOTION, INC.
- Current Assignee Address: TW Jhubei, Hsinchu County
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW101132292A 20120905
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F13/00 ; G06F12/02 ; G11C29/00 ; G11C16/34

Abstract:
A FLASH memory is used in data storage and is further stored with a logical-to-physical address mapping table and a write protection mapping table. The write protection mapping table shows the write protection statuses of the different logical addresses. In accordance with logical addresses issued via a dynamic capacity management command from a host, a controller of the data storage device modifies the logical-to-physical address mapping table to break the logical-to-physical mapping relationship of the issued logical addresses. Further, the controller asserts a flag, corresponding to the issued logical addresses, in the write protection mapping table, to a write protected mode. According to a change in the amount of write-protected flags of the write protection mapping table, the controller adjusts an end-of-life judgment value of the FLASH memory and thereby a lifespan of the FLASH memory is prolonged.
Public/Granted literature
- US20140068158A1 FLASH STORAGE DEVICE AND CONTROL METHOD FOR FLASH MEMORY Public/Granted day:2014-03-06
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