Invention Grant
US09563491B2 High voltage failure recovery for emulated electrically erasable (EEE) memory system
有权
用于模拟电可擦除(EEE)存储器系统的高电压故障恢复
- Patent Title: High voltage failure recovery for emulated electrically erasable (EEE) memory system
- Patent Title (中): 用于模拟电可擦除(EEE)存储器系统的高电压故障恢复
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Application No.: US14484876Application Date: 2014-09-12
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Publication No.: US09563491B2Publication Date: 2017-02-07
- Inventor: Ross S. Scouller , Jeffrey C. Cunningham , Daniel L. Andre , Tim J. Coots
- Applicant: Ross S. Scouller , Jeffrey C. Cunningham , Daniel L. Andre , Tim J. Coots
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06F11/07

Abstract:
The present disclosure provides methods and circuits for managing failing sectors in a non-volatile memory. A record address and a read control signal are received, where the record address identifies a location in the non-volatile memory. The record address is compared with a plurality of dead sector addresses, where the dead sector addresses correspond to a subset of sectors located in the non-volatile memory. Data located at the record address is determined to be invalid in response to a combination of a first detection that the record address matches one of the dead sector addresses and a second detection that the read control signal indicates a read operation is requested to be performed on the non-volatile memory.
Public/Granted literature
- US20160077906A1 HIGH VOLTAGE FAILURE RECOVERY FOR EMULATED ELECTRICALLY ERASABLE (EEE) MEMORY SYSTEM Public/Granted day:2016-03-17
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