Invention Grant
- Patent Title: Self-adjusting phase change memory storage module
- Patent Title (中): 自适应相变存储器模块
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Application No.: US13952279Application Date: 2013-07-26
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Publication No.: US09563371B2Publication Date: 2017-02-07
- Inventor: Jing Li , Dinesh C. Verma
- Applicant: GLOBALFOUNDREIS INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDREIS INC.
- Current Assignee: GLOBALFOUNDREIS INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Scully Scott Murphy and Presser
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C11/56 ; G11C13/00

Abstract:
A dynamic self-adjusting memory storage device and method of operating. The device includes a plurality of adjustable-size phase change memory (PCM) storage sub-modules connected to and communicating over a bus with a control device. One of the plurality of adjustable-size memory storage sub-modules is in a stand-by mode of operation. The control device implements steps to: determine, based on a switching criteria, when the memory storage device needs to be switched to a different operation mode; select one or more adjustable-sized memory storage sub-modules for switching to said different operation mode; copy stored data from a selected actively operating adjustable-size memory storage sub-module to said adjustable-size memory storage sub-module in said stand-by mode; and change the capacity of the selected actively operating adjustable-size memory storage sub-module after the copying. The dynamic self-adjusting memory capacity method is performed without powering down the memory storage device or paying any timing penalty.
Public/Granted literature
- US20150032979A1 SELF-ADJUSTING PHASE CHANGE MEMORY STORAGE MODULE Public/Granted day:2015-01-29
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