Invention Grant
- Patent Title: Optical semiconductor device and method of producing the same
- Patent Title (中): 光半导体装置及其制造方法
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Application No.: US14807501Application Date: 2015-07-23
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Publication No.: US09563100B2Publication Date: 2017-02-07
- Inventor: Ryuji Masuyama , Naoya Kono , Daisuke Kimura , Hirohiko Kobayashi , Takamitsu Kitamura , Hideki Yagi
- Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Applicant Address: JP Osaka
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka
- Agency: Smith, Gambrell & Russell, LLP.
- Priority: JP2014-152004 20140725
- Main IPC: G02F1/025
- IPC: G02F1/025 ; G02F1/225 ; G02B6/132 ; G02F1/21 ; G02B6/136

Abstract:
An optical semiconductor device including: a substrate having a principal surface; first and second optical waveguides disposed on the principal surface of the substrate, the first and second optical waveguides extending in a first direction, the second optical waveguide being arranged adjacent to the first optical waveguide in a second direction intersecting with the first direction; first and second signal electrodes disposed on the first and second optical waveguides; a resistor disposed on the principal surface, the resistor being arranged between the first optical waveguide and the second optical waveguide, the resistor being electrically connected to the first signal electrode and the second signal electrode; a resin layer disposed on the principal surface, top surfaces of the first and second signal electrodes, and the resistor; and a capacitor disposed on the resin layer, the capacitor being electrically connected to the resistor through an opening of the resin layer.
Public/Granted literature
- US20160026064A1 OPTICAL SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME Public/Granted day:2016-01-28
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