Invention Grant
- Patent Title: Wafer temperature sensing methods and related semiconductor wafer
- Patent Title (中): 晶圆温度检测方法及相关半导体晶圆
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Application No.: US13681048Application Date: 2012-11-19
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Publication No.: US09562943B2Publication Date: 2017-02-07
- Inventor: Mei-Chen Chuang , Jui-Cheng Huang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: G01R31/10
- IPC: G01R31/10 ; G01R31/28 ; G01K7/01
Abstract:
A method includes measuring a first voltage across a test diode on a semiconductor wafer while injecting a first current into the test diode, measuring a second voltage across the test diode while injecting a second current into the test diode, and determining temperature of a region proximate the test diode according to difference between the first voltage and the second voltage.
Public/Granted literature
- US20140139246A1 Wafer Temperature Sensing Methods and Related Semiconductor Wafer Public/Granted day:2014-05-22
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