Invention Grant
- Patent Title: Magnetoresistance sensor with perpendicular anisotropy
- Patent Title (中): 具有垂直各向异性的磁阻传感器
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Application No.: US14606206Application Date: 2015-01-27
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Publication No.: US09537087B2Publication Date: 2017-01-03
- Inventor: Pedram Khalili Amiri , Zhongming Zeng , Kang L. Wang
- Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Applicant Address: US CA Oakland
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: US CA Oakland
- Agent John P. O'Banion
- Main IPC: H01L43/08
- IPC: H01L43/08 ; G01R33/09 ; H01L43/10
Abstract:
A nanoscale tunnel magneto-resistance (TMR) sensor comprising an in-plane-magnetized reference layer and a free layer comprising interfacial perpendicular anisotropy, wherein the free layer comprises a sensing layer for sensing resistance as a function of applied magnetic field and is tunable to vary the direction of the sensing layer magnetization to be in-plane, canted, or out-of-plane.
Public/Granted literature
- US20150137292A1 MAGNETORESISTANCE SENSOR WITH PERPENDICULAR ANISOTROPY Public/Granted day:2015-05-21
Information query
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