Invention Grant
- Patent Title: High heat-radiant optical device substrate
- Patent Title (中): 高辐射光学器件基板
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Application No.: US14609112Application Date: 2015-01-29
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Publication No.: US09537074B2Publication Date: 2017-01-03
- Inventor: Ki Myung Nam , Tae Hwan Song , Young Chul Jun
- Applicant: Point Engineering Co., Ltd.
- Applicant Address: KR Asan-si, Chungcheongnam-do
- Assignee: Point Engineering Co., Ltd.
- Current Assignee: Point Engineering Co., Ltd.
- Current Assignee Address: KR Asan-si, Chungcheongnam-do
- Agency: Sunstein Kann Murphy & Timbers LLP
- Priority: KR10-2011-0062498 20110627
- Main IPC: B29C65/00
- IPC: B29C65/00 ; B32B3/00 ; B32B5/00 ; B32B5/18 ; B32B37/00 ; H05K3/46 ; B32B38/04 ; C09J5/02 ; B32B27/00 ; B32B7/00 ; B32B9/00 ; B32B15/04 ; B32B15/08 ; B32B27/38 ; H01L29/18 ; H01L33/00 ; H01L33/64 ; H01L23/00 ; H01L33/48 ; H01L25/00 ; B32B15/092 ; B32B15/20 ; B32B27/04 ; B29C65/48 ; H01L33/62
Abstract:
An optical device substrate includes metal plates and insulating layers formed between the metal plates. Each insulating layer includes a cured insulating layer formed by curing insulating material and an anodized layer merged with each metal plate, the anodized layer formed by anodizing a first metal and a second metal of each metal plate. The first metal and the second metal include a first anodized layer and a second anodized layer, respectively, and are electrically insulated by interfaces including a first interface formed between the first metal and the first anodized layer, a second interface formed between the first anodized layer and the cured insulating layer, a third interface formed between the cured insulating layer and the second metal and a fourth interface formed between the second anodized layer and the second metal.
Public/Granted literature
- US20150147580A1 High Heat-Radiant Optical Device Substrate Public/Granted day:2015-05-28
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