Method of fabricating a solar cell with a tunnel dielectric layer

Invention Grant

US09537030B2 Method of fabricating a solar cell with a tunnel dielectric layer 有权

Title translation: 制造具有隧道介电层的太阳能电池的方法

Patent Title: Method of fabricating a solar cell with a tunnel dielectric layer
Patent Title (中): 制造具有隧道介电层的太阳能电池的方法
Application No.: US14725939

Application Date: 2015-05-29
Publication No.: US09537030B2

Publication Date: 2017-01-03
Inventor: Tim Dennis , Scott Harrington , Jane Manning , David D. Smith , Ann Waldhauer
Applicant: SunPower Corporation
Applicant Address: US CA San Jose
Assignee: SunPower Corporation
Current Assignee: SunPower Corporation
Current Assignee Address: US CA San Jose
Agency: Blakely Sokoloff Taylor Zafman LLP
Main IPC: H01L21/00
IPC: H01L21/00 ; H01L31/0392 ; H01L31/0216 ; H01L31/0236 ; H01L31/0368 ; H01L31/068 ; H01L31/18

Abstract:

Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.

Abstract(Chinese):

描述了制造具有隧道介电层的太阳能电池的方法。还描述了具有隧道介电层的太阳能电池。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备