Invention Grant
US09537027B2 Backside configured surface plasmonic structure for infrared photodetector and imaging focal plane array enhancement
有权
用于红外光电检测器和成像焦平面阵列增强的背面配置表面等离子体结构
- Patent Title: Backside configured surface plasmonic structure for infrared photodetector and imaging focal plane array enhancement
- Patent Title (中): 用于红外光电检测器和成像焦平面阵列增强的背面配置表面等离子体结构
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Application No.: US14227607Application Date: 2014-03-27
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Publication No.: US09537027B2Publication Date: 2017-01-03
- Inventor: Xuejun Lu , Guiru Gu , Puminun Vasinajindakaw
- Applicant: University of Massachusetts
- Applicant Address: US MA Boston
- Assignee: University of Massachusetts
- Current Assignee: University of Massachusetts
- Current Assignee Address: US MA Boston
- Agency: Medlen & Carroll, LLP
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L31/0352 ; H01L27/144 ; H01L31/0232 ; H01L31/09
Abstract:
The invention relates to quantum dot and photodetector technology, and more particularly, to quantum dot infrared photodetectors (QDIPs) and focal plane array. The invention further relates to devices and methods for the enhancement of the photocurrent of quantum dot infrared photodetectors in focal plane arrays.
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