Invention Grant
- Patent Title: Semiconductor device with SiC base layer
- Patent Title (中): 具有SiC基层的半导体器件
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Application No.: US14389242Application Date: 2013-03-18
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Publication No.: US09537002B2Publication Date: 2017-01-03
- Inventor: Yuichi Harada , Noriyuki Iwamuro , Yasuyuki Hoshi , Shinsuke Harada
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-shi
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2012-081171 20120330
- International Application: PCT/JP2013/057739 WO 20130318
- International Announcement: WO2013/146445 WO 20131003
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/78 ; H01L21/04 ; H01L29/66 ; H01L29/16 ; H01L29/423 ; H01L29/10 ; H01L29/06 ; H01L29/08
Abstract:
A base layer is used that has an N-type SiC layer formed in a surface layer on the front surface side of an N-type SiC substrate, and a P-type region is formed on a surface of the N-type SiC layer with an N-type source region selectively formed in a surface layer of the P-type region. A source electrode is formed on a surface of the N-type source region and a drain electrode is formed on the back surface side of the N-type SiC substrate. Additionally, the gate electrode is formed via a gate insulation film only on a surface of the P-type region. In this way, high electric field is no longer applied to the gate insulation film on the surface of the N-type SiC layer due to stoppage of voltage application to the gate electrode.
Public/Granted literature
- US20150053998A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-02-26
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