Invention Grant
- Patent Title: Semiconductor device with increased safe operating area
- Patent Title (中): 半导体器件安全运行区域增加
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Application No.: US13792876Application Date: 2013-03-11
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Publication No.: US09537000B2Publication Date: 2017-01-03
- Inventor: Weize Chen , Patrice M. Parris
- Applicant: Weize Chen , Patrice M. Parris
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee Address: US TX Austin
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/10 ; H01L29/06 ; H01L29/08
Abstract:
A semiconductor device includes a substrate having a surface, a composite body region disposed in the substrate, having a first conductivity type, and comprising a body contact region at the surface of the substrate and a well in which a channel is formed during operation, a source region disposed in the semiconductor substrate adjacent the composite body region and having a second conductivity type, and an isolation region disposed between the body contact region and the source region. The composite body region further includes a body conduction path region contiguous with and under the source region, and the body conduction path region has a higher dopant concentration level than the well.
Public/Granted literature
- US20140252472A1 SEMICONDUCTOR DEVICE WITH INCREASED SAFE OPERATING AREA Public/Granted day:2014-09-11
Information query
IPC分类:
