Invention Grant
- Patent Title: FET device with tuned gate work function
- Patent Title (中): 具有调谐门功能的FET器件
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Application No.: US14689181Application Date: 2015-04-17
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Publication No.: US09536974B2Publication Date: 2017-01-03
- Inventor: Sylvain Henri Baudot
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/32
- IPC: H01L21/32 ; H01L29/49 ; H01L29/40 ; H01L21/265 ; H01L29/66 ; H01L21/02 ; H01L21/324 ; H01L29/417 ; H01L21/28 ; H01L21/3215 ; H01L29/78
Abstract:
A method of forming a semiconductor device is provided including forming a gate structure comprising a metal-containing layer over a semiconductor layer and doping the metal-containing layer by tilted ion implantation.
Public/Granted literature
- US20160308017A1 FET DEVICE WITH TUNED GATE WORK FUNCTION Public/Granted day:2016-10-20
Information query
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