Invention Grant
US09536968B2 Semiconductor devices including contact patterns having a rising portion and a recessed portion
有权
包括具有上升部分和凹陷部分的接触图案的半导体器件
- Patent Title: Semiconductor devices including contact patterns having a rising portion and a recessed portion
- Patent Title (中): 包括具有上升部分和凹陷部分的接触图案的半导体器件
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Application No.: US14715643Application Date: 2015-05-19
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Publication No.: US09536968B2Publication Date: 2017-01-03
- Inventor: Sungil Park , Munhyeon Kim , Woonggi Kim , Keunhwi Cho , Hwichan Jun , Dongwon Kim , Daewon Ha
- Applicant: Sungil Park , Munhyeon Kim , Woonggi Kim , Keunhwi Cho , Hwichan Jun , Dongwon Kim , Daewon Ha
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2014-0148527 20141029
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/45 ; H01L29/06 ; H01L29/78 ; H01L29/66
Abstract:
Semiconductor devices may include a gate pattern and a contact pattern disposed on an active region. The contact pattern may include a recessed portion near the gate pattern, and a rising portion away from the gate pattern. The gate pattern may include a gate insulating layer and a gate electrode disposed on the gate insulating layer. An upper surface of the recessed portion may be lower than an upper surface of the rising portion.
Public/Granted literature
- US20160126326A1 Semiconductor Devices Including Contact Patterns Having a Rising Portion and a Recessed Portion Public/Granted day:2016-05-05
Information query
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