Invention Grant
- Patent Title: Heat spreader on GaN semiconductor device
- Patent Title (中): 散热器在GaN半导体器件上
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Application No.: US14922017Application Date: 2015-10-23
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Publication No.: US09536965B2Publication Date: 2017-01-03
- Inventor: Yi Pei , Mengjie Zhou , Naiqian Zhang
- Applicant: Dynax Semiconductor, Inc.
- Applicant Address: CN Kunshan
- Assignee: DYNAX SEMICONDUCTOR, INC.
- Current Assignee: DYNAX SEMICONDUCTOR, INC.
- Current Assignee Address: CN Kunshan
- Agency: Fleiner IP Law, LLC
- Agent Zareefa Burki Flener
- Priority: CN201410577484 20141024
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/47 ; H01L29/778 ; H01L29/16 ; H01L29/45 ; H01L29/40 ; H01L29/08 ; H01L29/20 ; H01L29/06 ; H01L29/41 ; H01L23/373
Abstract:
A semiconductor device comprises: a substrate; a multilayer semiconductor layer located on the substrate; a source located on the multilayer semiconductor layer, the source including a first source portion inside an active region and a second source portion inside a passive region; a drain located on the multilayer semiconductor layer, the drain including a first drain portion inside the active region and a second drain region inside the passive region; a gate located on the multilayer semiconductor layer, the gate including a first gate portion inside the active region and a second gate portion inside the passive region, and the first gate portion being in a form of interdigital among the first source portion and the first drain portion; and a heat dissipating layer disposed at one or more of the first source portion, the first drain portion, the first gate portion, the second source portion, the second drain portion and the second gate portion.
Public/Granted literature
- US20160118460A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-04-28
Information query
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