Invention Grant
- Patent Title: Semiconductor substrate and a method of manufacturing the same
- Patent Title (中): 半导体衬底及其制造方法
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Application No.: US14301995Application Date: 2014-06-11
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Publication No.: US09536958B2Publication Date: 2017-01-03
- Inventor: Hans-Joachim Schulze , Frank Pfirsch , Hans-Joerg Timme
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/36 ; H01L21/22 ; H01L21/265 ; H01L21/322 ; H01L29/32 ; H03H9/02 ; H03H9/17
Abstract:
The semiconductor substrate includes a high-ohmic semiconductor material with a conduction band edge and a valence band edge, separated by a bandgap, wherein the semiconductor material includes acceptor or donor impurity atoms or crystal defects, whose energy levels are located at least 120 meV from the conduction band edge, as well as from the valence band edge in the bandgap; and wherein the concentration of the impurity atoms or crystal defects is larger than 1×1012 cm−3.
Public/Granted literature
- US20140291809A1 Semiconductor Substrate and a Method of Manufacturing the Same Public/Granted day:2014-10-02
Information query
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