A method for producing a semiconductor device includes forming a fin-shaped semiconductor layer on a semiconductor substrate and a first pillar-shaped semiconductor layer, a first dummy gate layer and a second pillar-shaped semiconductor layer, and a second dummy gate layer. Third and fourth dummy gate layers are formed on sidewalls of the first dummy layer gate, the first pillar-shaped semiconductor layer, the second dummy gate layer and the second pillar-shaped semiconductor layer. An interlayer insulating film is deposited, the dummy gate layers are removed, and a gate insulator is formed film around the first and second pillar-shaped semiconductor layers. A first metal is deposited and a gate electrode and a gate line are formed around the first pillar-shaped semiconductor layer. Second and third metals are deposited and a first contact and a pillar-shaped resistance-changing layer, a lower electrode, and a reset gate are formed.