Invention Grant
US09536918B2 Integrated circuit with cavity-based electrical insulation of a photodiode 有权
集成电路与光电二极管的基于空腔的电绝缘

Integrated circuit with cavity-based electrical insulation of a photodiode
Abstract:
An integrated circuit includes a semiconductor substrate, at least one photodiode, which is formed on a surface of the semiconductor substrate, at least one trench, which extends from the surface of the semiconductor substrate into the semiconductor substrate and surrounds a region of the semiconductor substrate on which the photodiode Is arranged, and at least one cavity in the semiconductor substrate, which is located below the surface of the semiconductor substrate. The at least one trench and the at least one cavity form an electrical insulation structure between the region of the semiconductor substrate on which the photodiode is arranged and one or more adjacent regions of the semiconductor substrate.
Information query
Patent Agency Ranking
0/0