Invention Grant
US09536918B2 Integrated circuit with cavity-based electrical insulation of a photodiode
有权
集成电路与光电二极管的基于空腔的电绝缘
- Patent Title: Integrated circuit with cavity-based electrical insulation of a photodiode
- Patent Title (中): 集成电路与光电二极管的基于空腔的电绝缘
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Application No.: US14840371Application Date: 2015-08-31
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Publication No.: US09536918B2Publication Date: 2017-01-03
- Inventor: Thoralf Kautzsch
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Associates, LLC
- Priority: DE202014104087U 20140901
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/0475

Abstract:
An integrated circuit includes a semiconductor substrate, at least one photodiode, which is formed on a surface of the semiconductor substrate, at least one trench, which extends from the surface of the semiconductor substrate into the semiconductor substrate and surrounds a region of the semiconductor substrate on which the photodiode Is arranged, and at least one cavity in the semiconductor substrate, which is located below the surface of the semiconductor substrate. The at least one trench and the at least one cavity form an electrical insulation structure between the region of the semiconductor substrate on which the photodiode is arranged and one or more adjacent regions of the semiconductor substrate.
Public/Granted literature
- US20160064431A1 INTEGRATED CIRCUIT WITH CAVITY-BASED ELECTRICAL INSULATION OF A PHOTODIODE Public/Granted day:2016-03-03
Information query
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