知搜-全球专利检索

  1. Login
  2. Sign Up
Invention Grant
US09536899B2 Semiconductor chip including integrated circuit having cross-coupled transistor configuration and method for manufacturing the same 有权
包括具有交叉耦合晶体管配置的集成电路的半导体芯片及其制造方法

Semiconductor chip including integrated circuit having cross-coupled transistor configuration and method for manufacturing the same
Abstract:
A first conductive structure forms gate electrodes of a first transistor of a first transistor type and a first transistor of a second transistor type. A second conductive structure forms a gate electrode of a second transistor of the first transistor type. A third conductive structure forms a gate electrode of a second transistor of the second transistor type. A fourth conductive structure forms a gate electrode of a third transistor of the first transistor type. A fifth conductive structure forms a gate electrode of a third transistor of the second transistor type. A sixth conductive structure forms gate electrodes of a fourth transistor of the first transistor type and a fourth transistor of the second transistor type. The second and third transistors of the first transistor type and the second and third transistors of the second transistor type are electrically connected to form a cross-coupled transistor configuration.
Abstract(Chinese):

第一导电结构形成第一晶体管类型的第一晶体管和第二晶体管类型的第一晶体管的栅电极。 第二导电结构形成第一晶体管类型的第二晶体管的栅电极。 第三导电结构形成第二晶体管类型的第二晶体管的栅电极。 第四导电结构形成第一晶体管类型的第三晶体管的栅电极。 第五导电结构形成第二晶体管类型的第三晶体管的栅电极。 第六导电结构形成第一晶体管类型的第四晶体管的栅电极和第二晶体管类型的第四晶体管。 第一晶体管类型的第二和第三晶体管和第二晶体管类型的第二和第三晶体管电连接以形成交叉耦合晶体管配置。

Public/Granted literature
Information query
Espacenet
Patent Agency Ranking
0/0