Invention Grant
- Patent Title: Non-volatile memory device having a vertical structure and method of fabricating the same
- Patent Title (中): 具有垂直结构的非易失性存储器件及其制造方法
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Application No.: US14674583Application Date: 2015-03-31
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Publication No.: US09536896B2Publication Date: 2017-01-03
- Inventor: Sang-Hoon Lee , Jin-Gyun Kim , Hyun Namkoong , Ki-Hyun Hwang , Hun-Hyeong Lim , Dong-Kyum Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2011-0041995 20110503
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L29/788 ; H01L29/792 ; H01L29/423
Abstract:
A non-volatile memory device having a vertical structure includes a semiconductor layer, a sidewall insulation layer extending in a vertical direction on the semiconductor layer, and having one or more protrusion regions, first control gate electrodes arranged in the vertical direction on the semiconductor layer, and respectively contacting one of portions of the sidewall insulation layer where the one or more protrusion regions are not formed and second control gate electrodes arranged in the vertical direction on the semiconductor layer, and respectively contacting one of the one or more protrusion regions.
Public/Granted literature
- US20150206901A1 NON-VOLATILE MEMORY DEVICE HAVING A VERTICAL STRUCTURE AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-07-23
Information query
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