Invention Grant
US09536880B2 Devices having multiple threshold voltages and method of fabricating such devices
有权
具有多个阈值电压的器件和制造这种器件的方法
- Patent Title: Devices having multiple threshold voltages and method of fabricating such devices
- Patent Title (中): 具有多个阈值电压的器件和制造这种器件的方法
-
Application No.: US14704511Application Date: 2015-05-05
-
Publication No.: US09536880B2Publication Date: 2017-01-03
- Inventor: Qintao Zhang , Aimin Xing
- Applicant: Broadcom Corporation
- Applicant Address: US CA Irvine
- Assignee: BROADCOM CORPORATION
- Current Assignee: BROADCOM CORPORATION
- Current Assignee Address: US CA Irvine
- Agency: Foley & Lardner LLP
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/8238 ; H01L21/84 ; H01L29/06 ; H01L29/78 ; H01L29/167 ; H01L21/265
Abstract:
Methods of fabricating devices (e.g., FDSOI devices) having multiple threshold voltages are described. One method includes providing a first fixed charge region proximate to an interface of an insulating (e.g., buried oxide (BOX) layer) and a semiconductor substrate for a first device. The first charge region has a first configuration of fixed charges. The method also includes providing a second fixed charge region proximate to the interface of the insulating layer and the semiconductor substrate for the second device. The second charge region has a second configuration of fixed charges that is different than the first configuration.
Public/Granted literature
- US20160300838A1 DEVICES HAVING MULTIPLE THRESHOLD VOLTAGES AND METHOD OF FABRICATING SUCH DEVICES Public/Granted day:2016-10-13
Information query
IPC分类:
