Invention Grant
US09536862B2 Microelectronic assemblies with integrated circuits and interposers with cavities, and methods of manufacture
有权
具有集成电路的微电子组件和具有空腔的插入件以及制造方法
- Patent Title: Microelectronic assemblies with integrated circuits and interposers with cavities, and methods of manufacture
- Patent Title (中): 具有集成电路的微电子组件和具有空腔的插入件以及制造方法
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Application No.: US14980996Application Date: 2015-12-28
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Publication No.: US09536862B2Publication Date: 2017-01-03
- Inventor: Hong Shen , Charles G. Woychik , Arkalgud R. Sitaram
- Applicant: Invensas Corporation
- Applicant Address: US CA San Jose
- Assignee: Invensas Corporation
- Current Assignee: Invensas Corporation
- Current Assignee Address: US CA San Jose
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/50 ; H01L23/498 ; H01L23/538 ; H01L21/56 ; H01L25/065 ; H01L23/00 ; H01L21/52 ; H01L25/00
Abstract:
Semiconductor integrated circuits (110) or assemblies are disposed at least partially in cavities between two interposers (120). Conductive vias (204M) pass through at least one of the interposers or at least through the interposer's substrate, and reach a semiconductor integrated circuit or an assembly. Other conductive vias (204M.1) pass at least partially through multiple interposers and are connected to conductive vias that reach, or are capacitively coupled to, a semiconductor IC or an assembly. Other features are also provided.
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