Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
- Patent Title (中): 半导体器件及其制造方法相同
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Application No.: US15097111Application Date: 2016-04-12
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Publication No.: US09536849B2Publication Date: 2017-01-03
- Inventor: Akira Yajima , Hideki Harano , Katsuhiro Torii , Hironori Ochi
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2015-092604 20150430
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/48 ; H01L23/00 ; H01L23/31 ; H01L21/56
Abstract:
A semiconductor device includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate, a post electrode formed on the pad electrode and made of a copper film, a solder ball electrode formed on the post electrode and made of ternary alloy containing tin, a terminal connected to the solder ball electrode and formed on a front surface of a wiring board, and a sealing material filling a gap between the semiconductor substrate and the wiring board. The post electrode includes a cylindrical stem portion and an overhanging portion positioned in an upper part of the stem portion and protruding to an outer side of the stem portion, the solder ball electrode is connected to an upper surface of the post electrode over the stem portion and the overhanging portion, and a sidewall of the stem portion contacts with the sealing material over the entire circumference thereof.
Public/Granted literature
- US20160322321A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2016-11-03
Information query
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