Invention Grant
US09536846B2 Semiconductor devices having through electrodes, methods of fabricating the same, electronic systems including the same, and memory cards including same
有权
具有通孔电极的半导体器件，其制造方法，包括该半导体器件的电子系统和包括该电极的存储卡
- Patent Title: Semiconductor devices having through electrodes, methods of fabricating the same, electronic systems including the same, and memory cards including same
- Patent Title (中): 具有通孔电极的半导体器件，其制造方法，包括该半导体器件的电子系统和包括该电极的存储卡
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Application No.: US14526073Application Date: 2014-10-28
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Publication No.: US09536846B2Publication Date: 2017-01-03
- Inventor: Jin Woo Park , Sung Su Park , Bae Yong Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon
- Priority: KR10-2014-0089995 20140716
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/48 ; H01L21/768 ; H01L21/683
Abstract:
A semiconductor device includes a chip body having an uneven surface including at least two regions at different levels from one another, a through electrode penetrating the chip body and having an end which is exposed by the uneven surface of the chip body, a passivation layer disposed on the uneven surface of the chip body, and a bump disposed on the passivation layer and the exposed end of the through electrode and overlapping with the uneven surface of the chip body.
Public/Granted literature
Information query
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