Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14789994Application Date: 2015-07-02
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Publication No.: US09536831B2Publication Date: 2017-01-03
- Inventor: Jian-Bin Shiu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201510237821 20150512
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/544 ; H01L23/02 ; H01L21/50 ; H01L23/528 ; H01L23/00 ; H01L21/768 ; H01L21/56 ; H01L21/78 ; H01L23/522 ; H01L23/31 ; H01L27/146
Abstract:
A semiconductor device is disclosed. The semiconductor device includes: a substrate having a die region and a scribe line region defined thereon; and a bonding pad on the die region of the substrate and overlapping the scribe line region.
Public/Granted literature
- US20160336265A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2016-11-17
Information query
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